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An experimental 256 Mb non-volatile DRAM with cell plate boosted programming technique

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15 Author(s)
Ahn, J.-H. ; Hynix Semicond., Icheon, South Korea ; Hong, S.-H. ; Kim, S.-J. ; Ko, J.-B.
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A 256 Mb NVDRAM is fabricated with a modified 0.115 μm DRAM process. The cell transistor has a scaled polysilicon-oxide-nitride-oxide-silicon (SONOS) structure that traps electrons or holes at a relatively low voltage stress. NVDRAM utilizes DRAM storage node boost from the cell plate for programming to ensure more reliable operation.

Published in:

Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International

Date of Conference:

15-19 Feb. 2004