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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:8 Help

Impact of thermal NH3-nitridation on dielectric properties of ultrathin SiO2 films

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3 Author(s)
Fukuda, H. ; Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Yasuda, M. ; Iwabuchi, T.

The dielectric properties of rapid thermally NH3-nitrided (RTN) ultrathin ( approximately=5 nm) SiO2 films have been investigated. High-field endurance characteristics indicate that after Fowler-Nordheim electron injection, both the low-field leakage current and electron trap density increase. Moreover, the oxide leakage is strongly dependent on the NH3-nitridation time. These results indicate that in ultrathin SiO2 the oxide leakage is a result of trap-assisted tunnelling, leading to a breakdown event when a critical trap density is reached.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 8 )

Date of Publication: 9 April 1992

Page(s):
796 - 797
ISSN :
0013-5194
INSPEC Accession Number:
4156936
Digital Object Identifier :
10.1049/el:19920502
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
9 April 1992
Sponsored by :
Institution of Engineering and Technology

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