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Low-loss fibre-chip coupling by buried laterally tapered InP/InGaAsP waveguide structure

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4 Author(s)
Zengerle, R. ; Forschungsinst. der Deutschen Bunderspost Telekom, Darmstadt, Germany ; Bruckner, H. ; Olzhausen, H. ; Kohl, A.

A passive InP/InGaAsP spot-size transformer for low-loss coupling of semiconductor optoelectronic devices to single-mode fibres has been fabricated entirely on InP. Using a buried two-layer laterally tapered section, spot-size transformation is demonstrated from below 2 mu m up to 8 mu m, the spot size of a dispersion-shifted fibre at 1550 nm. For a chip without antireflection coating a total insertion loss of 2.7 dB was achieved at a taper length of approximately 600 mu m.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 7 )

Date of Publication:

26 March 1992

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