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The barrier height enhancement of n-In0.53Ga0.47As Schottky diodes grown by the MOCVD technique is demonstrated. A 30 nm thin fully depleted p+-In0.53Ga0.47As layer (Zn-doped, NA=1.3*1018 cm-3) is used to enhance the Schottky barrier. Ti is used as a barrier metal and mesa diodes with different barrier contact areas are prepared. The quasi-Schottky diodes exhibit barrier heights in the range 0.58-0.62 eV, i.e. they reach higher values than reported until now. The I-V characteristics show an ideality factor of n=1.03/1.19 and a reverse current density of JR=(3.8/42)*10-5 A/cm2.