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Very low threshold 1.5 mu m GaInAs/AlGaInAs BH GRINSCH strained-layer quantum well laser diodes grown by MOCVD

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8 Author(s)
Kasukawa, A. ; Bell Commun. Res., Red Bank, NJ, USA ; Bhat, R. ; Caneau, C. ; Andreadakis, N.
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A very low threshold current density of 400 A/cm2 was obtained in a 1.5 mu m GaInAs/AlGaInAs compressive strained-layer quantum well laser diode, grown by metal organic chemical vapour deposition (MOCVD), with continuously graded-index separate-confinement-heterostructure. A very low threshold current of 3.6 mA was achieved in a high reflective coated 130 mu m long buried heterostructure laser diode with MOCVD grown semi-insulating current blocking layer. The lasing wavelength was 1.48 mu m.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 18 )