By Topic

A CMOS bandgap reference with correction for device-to-device variation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Preetam Tadeparthy ; Texas Instruments PVT. LTD., Bangalore, India

A circuit technique for compensating the device-to-device variation in bandgap voltage references is presented. The circuit senses the variation of Vbe of the transistor with process and pumps into the emitter a PTAT current in direction opposite to the variation to bring it back to the right value. It also exploits the temperature coeff. of MOS Vt to compensate for higher order temperature variations. Silicon results show a variation of 60 mV across different lots and less than 50 PPM across temperature (-40° to 130°C). The prototype was built in a 0.18u CMOS digital process with low β PNP transistors.

Published in:

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on  (Volume:1 )

Date of Conference:

23-26 May 2004