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A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetectors

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6 Author(s)
Li, X. ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Li, Ning ; Demiguel, S. ; Campbell, Joe C.
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A systematic study of high-saturation-current p-i-n In0.53Ga0.47As photodiodes with a partially depleted absorber (PDA) has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53Ga0.47As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 9 )

Date of Publication:

Sept. 2004

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