By Topic

A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Li, X. ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Li, Ning ; Demiguel, S. ; Campbell, Joe C.
more authors

A systematic study of high-saturation-current p-i-n In0.53Ga0.47As photodiodes with a partially depleted absorber (PDA) has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53Ga0.47As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 9 )