By Topic

Nonlinear thermo-optic model for the characterization of optical self-heating in electro-optic semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Reano, R.M. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Whitaker, J.F. ; Katehi, L.P.B.

A nonlinear thermo-optic model for the characterization of electro-optic semiconductor probes used to simultaneously measure electric field and temperature is presented. Optical thermal self-heating of the semiconductor is shown to be the primary limiting mechanism for temperature dynamic range, electro-optic modulation power, temperature sensitivity, temperature contrast, and temperature invasiveness. Tradeoff considerations of these parameters as a function of optical wavelength and input optical power are discussed. Optical temporal defocusing is shown to minimize the effects of nonlinear absorption. Simulation results are compared with measurements.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 9 )