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A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology

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11 Author(s)
Plouchart, J.-O. ; IBM Semicond. R&D Center, Hopewell Junction, NY, USA ; Jonghae Kim ; Zamdmer, N. ; Liang-Hung Lu
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This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-μm SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.

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Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 9 )