By Topic

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
N. K. Zous ; Macronix Int. Co. Ltd., Hsinchu, Taiwan ; M. Y. Lee ; W. J. Tsai ; A. Kuo
more authors

The negative threshold voltage (Vt) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this Vt shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced Vt shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative Vt drift is proposed.

Published in:

IEEE Electron Device Letters  (Volume:25 ,  Issue: 9 )