MOS Characteristics of synthesized HfAlON-HfO/sub 2/ stack using AlN-HfO/sub 2/

We demonstrate a top-surface aluminized and nitrided HfO/sub 2/ gate dielectric using a synthesis of ultrathin aluminum nitride (AlN) and HfO/sub 2/. The reaction of AlN with HfO/sub 2/ through a subsequent high-temperature annealing incorporates Al and N into an HfO/sub 2/ layer, which results in a synthesis of HfAlON near the top surface of HfO/sub 2/, forming an HfAlON-HfO/sub 2/ stack structure. This approach suppresses interfacial layer growth and improves thermal stability of the dielectric, resulting in significant improvement in leakage current. It also shows no adverse effects caused by N and Al incorporation at the bottom interface.