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Browse Journals & Magazines > Electronics Letters ...> Volume:27 Issue:13 Help

Multiply-graded InGaAlAs heterojunction bipolar transistors

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2 Author(s)
Vicek, J.C. ; Dept. of Electr. Eng., MIT, Cambridge, MA, USA ; Fonstad, C.G.

InGaAlAs-InP double heterojunction bipolar transistors with continuously graded base-emitter and base-collector junctions were successively fabricated, and their DC characteristics measured. The devices exhibited a lower offset voltage (Voffset<20 mV), lower output conductance and higher collector-emitter breakdown voltage (BVCEO>13 V, BVCBO>20 V) than are typically achieved in single heterojunction InGaAlAs devices.

Published in:
Electronics Letters  (Volume:27 ,  Issue: 13 )

Date of Publication: 20 June 1991

Page(s):
1213 - 1215
ISSN :
0013-5194
INSPEC Accession Number:
3947580
Digital Object Identifier :
10.1049/el:19910756
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
20 June 1991
Sponsored by :
Institution of Engineering and Technology

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