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Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O3/BaRuO3 structure

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3 Author(s)
Koo, S.-M. ; Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA ; Lee, M.-S. ; Moon, B.M.

A nonvolatile current sensing device using Pb(Zr0.52,Ti0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 17 )