Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wennekers, P. ; Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany ; Huelsmann, A. ; Kaufel, G. ; Koehler, K.
more authors

A 14 GHz static frequency divider has been fabricated using an enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The divider has a power dissipation of 35 mW at a supply voltage of 1.80 V. The minimum input power for dividing operation is 8.3 dBm at a maximum input frequency of 14.2 GHz, which is lowered to -6.2 dBm, when operating at 12.0 GHz.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 13 )