By Topic

Read-cycle endurance of magnetic random access memory elements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
T. Kuroiwa ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan ; T. Takenaga ; B. Sadeh ; H. Kobayashi
more authors

The read-cycle endurance of a magnetic tunneling junction (MTJ) has been investigated, focusing on the spin-dependent tunneling current at high temperatures. The MTJ structure used in this study consisted of Ta-NiFe-CoFe-AlOx-CoFe-IrMn-NiFe-Ta prepared on a thermally oxidized Si wafer. Both the tunneling current and tunneling magnetoresistance ratio showed no significant degradation during the 1E9 read-cycle test using unipolar voltage pulses of 0.5 V at room temperature. Temperature dependence of the MTJs resistance calculated from the measured tunneling current has also been examined in a temperature range from room temperature to 175°C. Furthermore, in the case of read-cycle tests for thermally stressed MTJs, the variation of the tunneling current was less than 2% after 1E9 cycles at a stress temperature of 175°C. This indicates that MTJs have sufficient read-cycle endurance under high-temperature operation.

Published in:

IEEE Transactions on Magnetics  (Volume:40 ,  Issue: 4 )