By Topic

Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

A thermally assisted writing procedure is proposed in a tunnel junction based magnetic random access memory cell. The magnetic layers of the tunnel junction are both exchange-biased with antiferromagnetic layers, the reference layer having a much higher blocking temperature than the storage layer. In the operating mode, a current pulse sent through the junction generates enough heat to raise the temperature of the storage layer above its blocking temperature, without affecting the pinning of the reference layer. The concept is demonstrated here for an isolated junction using an homogeneous external magnetic field.

Published in:

Magnetics, IEEE Transactions on  (Volume:40 ,  Issue: 4 )