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Magnetic tunnel junctions were fabricated with tunnel barriers that had a thin film of Fe(0-8 Å thick) inserted in the middle to study the effect of FeOx doping on the magneto-electron transport properties of the junction. Tunneling magnetoresistance (TMR) ratio of 24% was realized with the tunnel junction with a 2 Å-thick Fe interlayer, whereas the junction without doping did not exhibit the TMR effect. The FeOx doping also considerably improved the thermal stability of the junction, retaining the TMR ratio of 15% at 350°C.
Date of Publication: July 2004