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Magnetoresistance of ferromagnetic point junctions from tunneling to direct contact regimes

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5 Author(s)
H. Pandana ; Coll. Park, Univ. of Maryland, College Park, MD, USA ; L. Gan ; M. Dreyer ; C. Krafft
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The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from 108 Ω-103 Ω. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 kΩ to either the diffusive regime or the tunneling regime, as supported by independent theories on spin-dependent transport. The suppression of magnetoresistance with incorporation of a 35-nm-thick Au barrier was observed, as well as the dependence of magnetoresistance on the relative orientations of the electrodes.

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IEEE Transactions on Magnetics  (Volume:40 ,  Issue: 4 )