By Topic

MOVPE grown 1360-nm GaInNAs quantum-well laser with multibarrier structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ki-Sung Kim ; Photonics Lab., Samsung Adv. Inst. of Technol., Gyeonggi-Do, South Korea ; Sung-Jin Lim ; Ki-Hong Kim ; Jae-Ryung Yoo
more authors

We present a promising method to achieve a high-performance GaInNAs quantum-well (QW) laser emitting 1.36 μm by metal-organic vapor phase epitaxy. It was found that the insertion of GaNAs-InGaAs layers to GaInNAs QW-GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. As the thickness of the GaNAs and InGaAs layers was decreased, the wavelength emitted from QW became longer. The optical efficiencies of the proposed QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360-nm laser diode are measured to be 892 A/cm2 and 0.135 W/A, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 9 )