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High voltage output circuit using n- and n-LDMOSFET with thick gate oxide for PDP driver IC

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2 Author(s)
Q. S. Song ; Analogchips Inc., Daejeon, South Korea ; S. -S. Song

A novel high voltage output circuit with thick-gated LDMOSFETs is proposed to reduce the chip size and to improve the switching speed for the plasma display panels (PDP) driver IC. The chip size of the PDP driver IC using the proposed output circuit is reduced by 35% with a similar falling time compared with the conventional one. The falling time of the proposed output circuit is about 2.5 times faster than that of the conventional one under the same size when the supply voltage and load capacitance are 180 V and 100 pF, respectively.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 16 )