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High efficiency 5GHz CMOS power amplifier with adaptive bias control circuit

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2 Author(s)
Yunseong Eo ; I-networking Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; KwangDu Lee

A 5 GHz automatically bias controlled power amplifier is manufactured in a 0.18 μm CMOS process and occupies 0.54 mm2. The measured power gain, P1dB, and PAE are 7.1 dB, 19.2 dBm, and 17.5%, respectively. For fair comparison, the same PA without the bias circuit is also implemented. The fully integrated bias control circuit improves the power efficiency by 21% at 13 dBm output power. Moreover, the P1dB is also improved from 18.3 dBm to 19.2 dBm.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

Date of Conference:

6-8 June 2004