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Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length

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8 Author(s)
King, M.C. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Lai, Z.M. ; Huang, C.H. ; Lee, C.F.
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We have modeled the as-measured and de-embedded NFmin on multi-fingers 0.13 μm node MOSFET. In contrast to the as-measured large NFmin value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

Date of Conference:

6-8 June 2004