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Foundry 0.13 μm CMOS modeling for MS/μwave SOC design at 10 GHz and beyond

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10 Author(s)

The paper reports on the first unitary set of geometry-scalable, wide-band compact models for all the components of a 0.13 μm RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models is achieved at the device level as well as by comparing measurements and simulation results of the S-parameter response and jitter generation of high-speed circuits operating above 10 GHz from a single 1.2 V supply.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

Date of Conference:

6-8 June 2004