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5.3 GHz 1.6 dB NF CMOS low noise amplifier using 0.11 μm technology

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5 Author(s)
Satou, H. ; Fujitsu Labs. Ltd., Kawasaki, Japan ; Yamazaki, H. ; Kobayashi, K. ; Mori, T.
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We fabricated a low noise amplifier (LNA) for a 5 GHz WLAN with a supply voltage of 1.2 V using 0.11 μm CMOS technology. Low voltage design is crucial for an analog circuit to use the scaled digital CMOS. Employing the cascode amplifier configuration, we have shown that the LNA has a wide operating margin even at the supply voltage of 1.2 V. The measured LNA revealed an NF of 1.6 dB, a power consumption of 12.5 mW and 8.2 dBm of OIP3 at 5.3 GHz with a supply voltage of 1.2 V.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

Date of Conference:

6-8 June 2004

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