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A 77 GHz SiGe power amplifier for potential applications in automotive radar systems

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3 Author(s)
Pfeiffer, U.R. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Reynolds, S.K. ; Floyd, B.A.

We present the performance of a 77 GHz power amplifier for potential applications directed towards automotive radar systems. The circuit was fabricated in a SiGe bipolar preproduction technology. A balanced two-stage common emitter circuit topology was used to achieve 6.1 dB of power gain at 77 GHz and 11.6 dBm output power at 1dB compression. The power amplifier uses a single 2.5 V supply and was fully integrated (including matching elements) to demonstrate its low-cost potential. First experimental results show its broadband characteristic from 40 GHz to 80 GHz and its temperature dependence up to 130°C.

Published in:
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

Date of Conference: 6-8 June 2004

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