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A study of multiple-valued magnetoresistive RAM (MRAM) using binary MTJ devices

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4 Author(s)
Kimura, H. ; Graduate Sch. of Inf. Sci., Tohoku Univ., Sendai, Japan ; Pagiamtzis, K. ; Sheikholeslami, A. ; Hanyu, T.

This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices, with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.

Published in:
Multiple-Valued Logic, 2004. Proceedings. 34th International Symposium on

Date of Conference: 19-22 May 2004

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