This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices, with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.
Published in:
Multiple-Valued Logic, 2004. Proceedings. 34th International Symposium on
Date of Conference: 19-22 May 2004