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Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser

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4 Author(s)
Kim, D. ; Dept. of Electr. & Comput. Eng., Hanyang Univ., Kyunggi-Do, South Korea ; Shim, J. ; Jang, D. ; Eo, Y.

A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70°C in a 10 Gbit/s directly modulated 1.3 μm InGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold current is demonstrated experimentally.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 15 )