Skip to Main Content
We review the emerging reliability issues associated with high-performance SiGe HBT technologies which are being increasingly deployed in a wide variety of mixed-signal circuit applications. For the purposes of this work, we define the concept of device "reliability" to be broader than its standard usage in the industry, to include all possible transistor degradation mechanisms, for all possible mixed-signal circuit designs, in any of the various intended mixed-signal applications. For instance, in addition to classical device reliability mechanisms associated with reverse emitter-base and high forward current density stress, new reliability issues for SiGe HBTs, including impact-ionization induced "mixed-mode" stress, scaling-induced breakdown voltage compression and operating point instabilities, geometrical scaling-induced low-frequency noise variations, and the impact of ionizing radiation on device and circuit reliability, are also addressed.
Device and Materials Reliability, IEEE Transactions on (Volume:4 , Issue: 2 )
Date of Publication: June 2004