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Optimization of large band-gap barriers for reducing leakage in bipolar cascade lasers

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3 Author(s)
F. Dross ; Thales Res. & Technol., Orsay, France ; F. van Dijk ; B. Vinter

In order to study the characteristics of bipolar cascade lasers, we have developed a fully consistent transport model compatible with Esaki tunnel junctions (TJs). First, we compare the calculated electrical characteristics of TJs made of different InGaAsP lattice-matched to InP materials with different doping concentrations. Then, a complex (p-n)-(n++p++)-(p-n)-(n++p++)-p-n) structure is implemented. The Esaki junctions are cladded by doped InP current confining layers, the width of which is optimized to prevent electron leakage. We find that a 25-nm-wide InP barrier confines more than 98% of the electron current for a total injection current of 10 at room temperature. The predicted differential quantum efficiency is then 230%.

Published in:

IEEE Journal of Quantum Electronics  (Volume:40 ,  Issue: 8 )