By Topic

Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chow, W.W. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Vawter, G.A. ; Guo, Junpeng

This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳100GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 8 )