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Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

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3 Author(s)
Chow, W.W. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Vawter, G.A. ; Guo, Junpeng

This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳100GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally.

Published in:
Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 8 )

Date of Publication: Aug. 2004

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