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Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

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7 Author(s)
Yu, D.S. ; Nano Sci. Technol. Center, Univ. Syst. of Taiwan, Hsinchu, Taiwan ; Chiang, K.C. ; Cheng, C.F. ; Chin, Albert
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We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm2/Vs and 1.7 times higher than LaAlO3-Si devices.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )

Date of Publication:

Aug. 2004

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