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Low-temperature power device: a new poly-Si high-voltage LDMOS with excimer laser crystallization

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4 Author(s)
Fang-Long Chang ; Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Ming-Jang Lin ; Liaw, C.W. ; Huang-Chung Cheng

A new low-temperature polysilicon high-voltage LDMOS (LTPS HVLDMOS) using excimer laser crystallization has been proposed for the first time. However, in order to enhance LTPS HVLDMOS characteristics, there are two starting points: 1) integrate the thin-film technology with the power device, and 2) clarify the requirement of excimer laser treatment for low-temperature power devices. As the result, the on/off current ratio after laser treatment is improved over 106 times than that before laser treatment at Ldrift = 15 μm and Vds = 25 V. The LTPS HVLDMOS after laser treatment also demonstrates the better tradeoff between the specific on resistance and breakdown voltage against the previous high-voltage thin-film transistors (HVTFTs) by solid-phase crystallization - such as semi-insulating (SI), metal field-plated, and offset-drain HVTFTs.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )

Date of Publication:

Aug. 2004

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