Self-aligned InP DHBT with f_τ and f_max over 300 GHz in a new manufacturable technology

We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (f_τ) and maximum oscillation frequency (f_max) over 300 GHz and open-base breakdown voltage (BV_ceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.