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The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

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5 Author(s)
Verzellesi, G. ; Dipt. di Ingegneria dell''Informazione, Univ. di Modena e Reggio Emilia, Italy ; Cavallini, A. ; Basile, A.F. ; Castaldini, A.
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Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.

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Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )