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Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

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3 Author(s)
Kow-Ming Chang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Jiunn-Yi Chu ; Chao-Chen Cheng

Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6×10-2 Ω·cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 8 )