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Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser

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5 Author(s)
M. J. Brennan ; Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada ; A. J. Budz ; B. J. Robinson ; P. Mascher
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Optical pulses are generated by passive and hybrid mode-locking of a long wavelength (1075-1085 nm) InGaAs-GaAs ridge waveguide laser grown by gas source molecular beam epitaxy. The devices are fabricated with two sections, one of which contains a bend in the waveguide for coupling to an external linear cavity. Pulses 2-5 ps in duration have been generated with average powers ranging from 750 μW to 1.8 mW. Pulse compression yields durations as short as 570 fs. Post amplification with a narrow stripe InGaAs-GaAs semiconductor optical amplifier increases the average output power up to 13 mW.

Published in:

IEEE Photonics Technology Letters  (Volume:16 ,  Issue: 8 )