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Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD

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8 Author(s)
G. Cibiel ; Lab. of Anal. & Archit. of Syst., Nat. Center of Sci. Res., Toulouse, France ; M. Regis ; O. Llopis ; A. Rennane
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In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.

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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:51 ,  Issue: 1 )