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Statistical modeling for post-cycling data retention of split-gate flash memories

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6 Author(s)
Ling-Chang Hu ; Dept. of Electr. Eng., Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan ; An-Chi Kang ; I-Tai Liu ; Yao-Feng Lin
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In developing a precise model for post-cycling data retention failure rate of split-gate flash memories, a statistical method is proposed for the extraction of the floating-gate potential from the measured bit-cell-current data. Floating gate charge leakage mechanism during retention of split-gate flash memories is investigated as well. While multiple leakage mechanisms maybe the responsible for the failure bits in stack-gate flash memories, it is found that stress induced leakage current is the major cause for post-cycling data retention failure bits in split-gate flash memories.

Published in:

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Date of Conference:

25-29 April 2004