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Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

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10 Author(s)
Gu, S.H. ; Macronix Int. Co. Ltd., Hsin-Chu, Taiwan ; Wang, M.T. ; Chan, C.T. ; Zous, N.K.
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The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find programmed charge spreads further into the channel with program/erase cycle number.

Published in:

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Date of Conference:

25-29 April 2004