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Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors

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2 Author(s)
Huard, V. ; Philips Semicond., Crolles, France ; Denais, M.

This works presents a thorough study of adequate methodology to be used in order to characterize the NBTI degradation by taking into account the transient effects. The hole trapping/detrapping effect on previously existent traps is the dominant origin of the transient effect and not the interface traps passivation by hydrogen atoms diffusing back to the interface.

Published in:

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Date of Conference:

25-29 April 2004