Cart (Loading....) | Create Account
Close category search window
 

Characterization of advanced excimer laser crystallized polysilicon thin film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

This work presents electrical and radiation stress as well as transient current analysis results for thin film transistors fabricated using an advanced polysilicon laser crystallization method, termed sequential lateral solidification. The TFTs exhibit excellent device characteristics and parameters such as very high electron mobility, as well as good bias stress endurance, with only a small threshold shift but without appreciable subthreshold swing degradation. The analysis of the drain current transients observed after a gate bias pulsing in the OFF state indicated a peak in their temperature dependence, with a generation freezeout at cryogenic temperatures suggesting good crystal quality. Gamma irradiation of TFTs, particularly in the presence of gate bias, resulted in a negative threshold voltage shift due to positive oxide charge creation and a small subthreshold swing degradation.

Published in:

Microelectronics, 2004. 24th International Conference on  (Volume:2 )

Date of Conference:

16-19 May 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.