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A new Au/Ti(70%)/Al(30%) composition has been proposed and investigated as an ohmic contact to p-type SiC. The dependence of the resistivity on the annealing conditions has been studied at temperatures ranging from 700 °C to 950 °C. The lowest contact resistivity of 1.40 × 10-5 Ω.cm2 is achieved after annealing at 900 °C. The study of the thermal properties determines the contact stability during the ageing at temperatures of 500-700 °C, operating temperatures up to 450 °C and current densities of 103 A/cm2. XPS depth analysis of annealed and aged contacts has been performed to understand the origin of the ohmic properties and the thermal and power stability observed.