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High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

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17 Author(s)
G. T. Jeong ; Semicond. R&D Div., Samsung Electron. Co. Ltd., South Korea ; H. C. Koo ; Y. N. Hwang ; S. H. Lee
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PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And Various approaches to reduce the writing Current will be reviewed.

Published in:

Microelectronics, 2004. 24th International Conference on  (Volume:1 )

Date of Conference:

16-19 May 2004