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In this paper we report the characteristics, design considerations and the interaction of fast recovery diodes with the main power semiconductor switch such as thyristors, GTOs, and IGBTs for high power conversion applications. We briefly explain the switching phenomena in diodes and how these are characterised and optimised by using different structures for specific applications in conjunction with main switching devices.
Microelectronics, 2004. 24th International Conference on (Volume:1 )
Date of Conference: 16-19 May 2004