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In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO2 buffer layer. The KrF excimer laser (λ=248 nm, τ=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900°C of the films has also been accomplished.