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Fabrication of Nd:KGd(WO4)2 thin film on Si substrate by introducing CeO2 buffer layer

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4 Author(s)
Okato, T. ; Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan ; Atanasov, P.A. ; Tomov, R.I. ; Obara, M.

In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO2 buffer layer. The KrF excimer laser (λ=248 nm, τ=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900°C of the films has also been accomplished.

Published in:

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Date of Conference:

22-27 June 2003