By Topic

Fabrication of Nd:KGd(WO4)2 thin film on Si substrate by introducing CeO2 buffer layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Okato, T. ; Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan ; Atanasov, P.A. ; Tomov, R.I. ; Obara, M.

In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO2 buffer layer. The KrF excimer laser (λ=248 nm, τ=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900°C of the films has also been accomplished.

Published in:

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Date of Conference:

22-27 June 2003