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Determination of the band diagram of the semiconductor laser structure by optical modulation spectroscopy methods

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6 Author(s)
Chernikov, M.A. ; Moscow Inst. of Phys. & Technol., Russia ; Sotnikov, A.E. ; Ryabushkin, O.A. ; Trubenko, P.
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This paper presents the use of photoreflectance, configuration of electroreflectance and below-bandgap-excitation photoreflectance for determination of the band diagram of the semiconductor laser AlGaAs/GaAs heterostructure with strained InGaAs quantum well grown on n-GaAs substrate. The structure was illuminated by low-intensity probe light with quantum energy and was exposed to external influence with modulation frequency f=330Hz.

Published in:
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Date of Conference: 22-27 June 2003

Print ISBN:
0-7803-7734-6
INSPEC Accession Number:
8158759
Digital Object Identifier :
10.1109/CLEOE.2003.1312240
Product Type:
Conference Publications

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