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A thermal model for insulated gate bipolar transistor module

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3 Author(s)
Zhaohui Luo ; Dept. of Electr. Eng., Univ. of Pittsburgh, PA, USA ; Hyungkeun Ahn ; Nokali, M.A.E.

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Zjc and case-to-ambient Zca. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.

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Power Electronics, IEEE Transactions on  (Volume:19 ,  Issue: 4 )