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Integration challenges of new materials and device architectures for IC applications

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39 Author(s)

Nguyen, Bich-yen ; Freescale Semicond., Technol. Solutions Organ., Austin, TX, USA ; Thean, Aaron ; White, Ted ; Vandooren, A.
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In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.

Published in:
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Date of Conference: 2004

Page(s):: 237 - 243
Print ISBN:: 0-7803-8528-4
INSPEC Accession Number:: 7995142

Digital Object Identifier :: 10.1109/ICICDT.2004.1309953
Product Type:: Conference Publications

Author(s)

Nguyen, Bich-yen
Freescale Semicond., Technol. Solutions Organ., Austin, TX, USA
Thean, Aaron ; White, Ted ; Vandooren, A. ; Sadaka, M. ; Mathew, L. ; Barr, A. ; Thomas, S. ; Zalava, M. ; Da Zhang ; Eades, D. ; Zhong-Hai Shi ; Schaeffer, J. ; Triyoso, D. ; Samavedam, S. ; Vartanian, V. ; Stephen, T. ; Goolsby, B. ; Zollner, S. ; Ran Liu ; Noble, R. ; Thien Nguyen ; Dhandapani, V. ; Xie, B. ; Xang-Dong Wang ; Jiang, J. ; Rai, R. ; Sadd, M. ; Ramon, M. ; Kalpat, S. ; Prabhu, L. ; Kaushik, V. ; Du, Y. ; Dao, T. ; Mendicino, M. ; Orlowski, Marius ; Tobin, P. ; Mogab, J. ; Venkatesan, S.

INSPEC: CONTROLLED INDEXING

CMOS integrated circuits

MOSFET

VLSI

capacitance

dielectric thin films

leakage currents

low-power electronics

nanoelectronics

silicon-on-insulator

work function

INSPEC: NON CONTROLLED INDEXING

CMOS devices

FDSOI

FinFET

capacitance equivalent thickness

gate leakage

high performance CMOS

high permittivity dielectric

low power CMOS

metal gate electrodes

new materials

threshold voltage

work function

IEEE TERMS

Application specific integrated circuits

CMOS technology

Dielectric materials

Dielectric substrates

Electrodes

High K dielectric materials

High-K gate dielectrics

Leakage current

MOSFET circuits

Thickness control

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