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Advanced double-gate fully-depleted silicon-on-insulator (DG-FDSOI) device and device impact on circuit design & power management

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1 Author(s)
Dao, T. ; Motorola SPS, Austin, TX, USA

Power consumption including leakage current is becoming one of the most important limiting factors in VLSI, especially in the sub-65nm technologies. While technologies are facing multiple challenges in scaling, there have been successful developments on reduction of power consumption and leakage current in circuit and system design techniques based on the cooperation between two traditionally separated technical fields - technology and design. The benefits of separate gate access capability of DG-FDSOI technology on supporting these kinds of cooperation techniques have been addressed together with the impact on circuit designs which take advantages of this technology.

Published in:

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Date of Conference:

2004

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