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X-band 0.5, 1, and 2 watt power amplifiers with marked improvement in power-added efficiency

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2 Author(s)
R. D. Boesch ; Watkins-Johnson Co., Palo Alto, CA, USA ; J. A. Thompson

Very efficient X-band MESFET power amplifiers, showing greater power-added efficiency over a wider bandwidth than any X-band amplifiers of comparable output reported to date, are discussed. The amplifiers were designed with attention given to optimum bias, proper harmonic termination, and efficient power combining. These device and design issues are discussed, and a straightforward design method which achieved the increased levels of efficiency is described

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:38 ,  Issue: 6 )